short channel
英 [ʃɔːt ˈtʃænl]
美 [ʃɔːrt ˈtʃænl]
网络 短通道; 短沟道
双语例句
- The model includes the substrate bias effect, the short channel effect and the relation between these two effects.
它综合考虑了衬偏效应、短沟道效应以及两者之间的关系。 - Development of Trench MOSFET short channel fet
沟槽型MOSFET的发展（英文）短沟道场效应晶体管 - The Model of Threshold Voltage in Short Channel Devices
短沟道器件阈电压模型 - Hot carrier effects in fluorinated short channel MOSFET have been investigated.
研究了用注F工艺制作的短沟MOSFET的热载流子效应。 - Schottky source and drain junctions are a promising structure to minimize the MOSFET short channel effect.
采用Schottky结源漏结构是克服传统MOSFET器件短沟效应的一种有效方法。 - The research results indicate that with the increase of the concave corner, the negative junction depth and the doping density of channel, the hot carrier effect immunity is enhanced; the threshold voltage increases and the short channel effect is suppressed.
研究发现，随着凹槽拐角、负结深的增大和沟道杂质浓度的提高，器件的抗热载流子能力增强，阈值电压升高，对短沟道效应的抑制作用增强。 - Based on the input structure of detonating fuse assembly in long channel three-level explosive train and factors related with boosting reliability, the input of detonating fuse assembly in short channel two-level explosive train was designed.
以长通道三级传爆序列导爆索组件输入端的结构为基础，综合考虑了影响传爆可靠性的因素，设计了短通道二级传爆序列导爆索组件输入端。 - Analytical Model of Subthreshold Current for Short Channel MOSFET
短沟道MOSFET亚阈值电流的解析模型 - The Temperature Dependence of Threshold Voltage and Transconductance in Short Channel MOS Devices
短沟道MOS器件阈电压和跨导的温度关系 - This paper discussed the electrical characteristic of short channel MOST at very high temperature.
本文以短沟道MOST电学参数的温度特性为研究对象，对高温短沟道MOST的电学特性进行了深入的探讨。 - We represent a temperature model of surface carrier mobility of short channel MOST after thinking about kinds of dispersion effect.
在考虑了各种散射效应对迁移率的影响后，提出了短沟道MOST表面载流子迁移率的温度模型。 - A quasi-two dimentional analytical model of threshold voltage for non-uniform doped short channel MOSFET is presented in this paper.
本文提出一个非均匀掺杂、短沟道MOSFET阈电压的准二维解析模型。 - This paper analyzes temperature characteristics ( 27 ℃ to high temperatures) on short channel MOSFET threshold voltages and gives calculation formulas of their temperature coefficients.
本文分析了短沟道MOST阈值电压在室温以上的温度特性，并给出了它的温度系数计算公式。 - Expressions of threshold voltage of short channel silicon gate MOS-FET and the temperature dependence of threshold voltage were derived from Yaus model.
本文从yau的模型出发，推导出了短沟道硅栅MOSFET的阈电压表达式及阈电压与温度的关系：并考虑短沟道MOSFET的扩散电流。 - Two-Dimensional Short Channel Mosfet Steady State and Substrate Current Simulation
二维短沟道MOSFET直流稳态与衬底电流的数值模拟 - So it is confirmed that our model can correctly simulate subtle differences in different structures, and gives a guidance for a new device structure design with suppressed short channel effects.
表明模型能对不同器件结构的细致差别正确模拟。研究结果为设计抑制短沟效应的新型器件提供了指导。 - This paper presents the results of a preliminary investigation into the axial strength of cold-formed thin-walled short channel sections under ambient and uniform high temperature conditions.
本篇文章对常温及均匀高温条件下的冷成型薄壁短槽钢的轴向强度进行了初步研究。 - A Study of the Flow Coefficient of Conical Valves with Short Channel
短通道园锥阀流量系数的研究 - The short channel effects, the structure of LDD and SOI, phaseshift mask and multilevel interconnection were included.
LDD和SOI结构；移相掩模光刻技术和多层金属布线工艺。 - We deduced a expressions for threshold voltage temperature coefficient of short channel MOST.
推导了了一个短沟道MOST阈值电压温度系数表达式； - The device size can be greatly shrunk with effectively suppressing short channel effect and parasitic bipolar effect in conventional MOSFET.
这种结构器件能有效降低困扰常规MOSFET的短沟效应和寄生的双极效应，能大幅度减小器件尺寸。 - Design and Properties of the Input of Detonating Fuse Assembly in Short Channel Two-level Explosive Train
短通道二级传爆序列导爆索组件输入端的设计及性能研究 - A Physical Model of Short Channel MOSFET's Transit Time
短沟道MOSFET渡越时间物理模型 - It was also shown that the novel device could suppress the short channel effect, drain-induced barrier lowering effect.
同时用实验结果表明，新结构器件能够有效抑制短沟道效应（SCE）、减小漏感应势垒降低效应（DIBL）等。 - This kind device can effectively suppress short channel effects for the scaling down of conventional MOSFETs, avoiding the serious effect of the steps of ion implantation and annealing at high temperature on the conventional SiC MOSFET.
该结构能有效地抑制在器件尺寸大幅度降低时困扰常规MOSFET的短沟效应，避免了离子注入和高温退火工艺对SiC常规MOSFET性能的严重影响。 - To a certain extent in reducing the size, MOSFET will reach the physical limits, and severe short channel effects and gate leakage current will appear.
在缩小到一定程度将达到它的物理极限，严重的短沟道效应和栅极泄漏电流将会出现。 - An analytical subthreshold surface potential model for the DMG SOI MOSFET with high k gate dielectrics, which accounts for the short channel effect and the fringing field effect, has been developed.
还研究了高k栅介质对DMGSOIMOSFET的影响，为高k栅介质DMGSOIMOSFET建立了表面势模型，模型中考虑了边缘电场效应和短沟道效应。 - Must explore the atonement training funds short channel and the measure positively;② Must strengthen to the school sports culture atmosphere research and the development;③ Must develop the Sports Team to set up, the training form multiplication research.
要积极探索弥补训练经费短缺的渠道和措施；②要加强对学校体育文化氛围的研究和开发；③要开展运动队组建、训练形式多元化研究。 - The discussion about the heat dissipation volume in the short channel length turns out that the channel length should be compromised between the power and heat dissipation.
讨论了短沟长器件中的散热容积问题，并得出沟道长度的选择需要在功耗与热损耗之间折衷考虑的结论。 - This paper focuses on the chip in the actual design of some specific problems encountered, such as a more accurate static timing analysis, clock crosstalk, power distribution, and substrate leakage, short channel effects and so on.
这里主要讨论在实际设计芯片中所遇到的一些具体问题，诸如更准确的静态时序分析，时钟串扰，电源分布，以及衬底漏电，短沟道效应等。